In pursuit of a novel generation of devices, exploration of spin properties of
the particles is needed. Spintronics is a modern field in physics which exploits
spin properties to be used in addition to the charge degree of freedom. Since
the conductivity mismatch problem presents a fundamental obstacle for
electrical spin injection from a ferromagnetic metal into a diffusive semiconductor,
other means for injecting spin-polarized carriers must be used. With a
tunnel contact, it is possible to achieve a highly spin-polarized room-temperature
tunnel injection. Here we describe a novel approach of applying magnetic
resonant tunneling diodes for spin manipulation. In this work, growth
and properties of all-II-VI magnetic resonant tunneling diodes, as applied to
spintronics, are reported.